Raman spectroscopy is widely used for evaluating chemical composition, orientation, crystallization, density, stress, temperature of semiconductor materials, and also for various structure-property evaluation such as impurity concentration, defect of semiconductor materials and composition ratio of mixed crystal semiconductor. Hall effect measurement with formed electrode is applied for evaluating electrical characteristics of carrier density in general, while Raman spectroscopy is also utilized for estimating carrier density of group III-V semiconductor.

In this application data, Jasco shows several measurement results using monocrystal SiC by Raman spectroscopy, such as determination of polymorphism and calculation of carrier density.